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| bzt52c?w silicon planar zener diodes features ? ideally suited for autom ated assembly processes ? total power dissipation: max. 500 mw absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t stg - 65 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 340 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-123 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c 1) v z is tested with pulses (20 ms). type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom v l zt for v zt z zt z zk at i zk i r at v r ma v ? (max.) ? (max.) ma a (max.) v BZT52C2V4W mh 2.4 5 2.2...2.6 100 600 1 50 1 bzt52c2v7w mj 2.7 5 2.5...2.9 100 600 1 20 1 bzt52c3v0w mk 3.0 5 2.8...3.2 95 600 1 10 1 bzt52c3v3w mm 3.3 5 3.1...3.5 95 600 1 5 1 bzt52c3v6w mn 3.6 5 3.4...3.8 90 600 1 5 1 bzt52c3v9w mp 3.9 5 3.7...4.1 90 600 1 3 1 bzt52c4v3w mr 4.3 5 4...4.6 90 600 1 3 1 bzt52c4v7w mx 4.7 5 4.4...5 80 500 1 3 2 bzt52c5v1w my 5.1 5 4.8...5.4 60 480 1 2 2 bzt52c5v6w mz 5.6 5 5.2...6 40 400 1 1 2 bzt52c6v2w na 6.2 5 5.8...6.6 10 150 1 3 4 bzt52c6v8w nb 6.8 5 6.4...7.2 15 80 1 2 4 bzt52c7v5w nc 7.5 5 7...7.9 15 80 1 1 5 bzt52c8v2w nd 8.2 5 7. 7...8.7 15 80 1 0.7 5 bzt52c9v1w ne 9.1 5 8.5...9.6 15 100 1 0.5 6 bzt52c10w nf 10 5 9.4...10.6 20 150 1 0.2 7 bzt52c11w nh 11 5 10.4...11.6 20 150 1 0.1 8 bzt52c12w nj 12 5 11.4...12.7 25 150 1 0.1 8 bzt52c13w nk 13 5 12.4...14.1 30 170 1 0.1 8 bzt52c15w nm 15 5 13.8 ...15.6 30 200 1 0.1 10.5 bzt52c16w nn 16 5 15.3 ...17.1 40 200 1 0.1 11.2 bzt52c18w np 18 5 16.8 ...19.1 45 225 1 0.1 12.6 bzt52c20w nr 20 5 18.8...21.2 55 225 1 0.1 14 bzt52c22w nx 22 5 20.8 ...23.3 55 250 1 0.1 15.4 bzt52c24w ny 24 5 22.8 ...25.6 70 250 1 0.1 16.8 bzt52c27w nz 27 2 25.1 ...28.9 80 300 0.5 0.1 18.9 bzt52c30w pa 30 2 28...32 80 300 0.5 0.1 21 bzt52c33w pb 33 2 31...35 80 325 0.5 0.1 23.1 bzt52c36w pc 36 2 34...38 90 350 0.5 0.1 25.2 bzt52c39w pd 39 2 37...41 130 350 0.5 0.1 27.3 bzt52c?w 2 date:2011/05 www.htsemi.com semiconductor jinyu package outline plastic surface mounted package; 2 leads sod-123 e mm unit a b c dehv all round d b c a a h h e p p e 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.9 3.7 0.2 o 5 bzt52c?w 3 date:2011/05 www.htsemi.com semiconductor jinyu |
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